石墨烯薄膜產(chǎn)品 Graphene film products
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超潔凈石墨烯薄膜
Superclean Graphene Film on Cu Foil
超潔凈石墨烯薄膜（Cu-P1-C4）解決了石墨烯高溫CVD生長(zhǎng)過程中的本征碳污染的問題，相比于常規(guī)CVD石墨烯，超潔凈石墨烯具有更高的透光性，更高的遷移率，更低的接觸電阻，更快的界面電荷轉(zhuǎn)移性能以及更良好的親水性，是研究石墨烯本征物理化學(xué)性質(zhì)、探索高端器件應(yīng)用、以及制定檢測(cè)標(biāo)準(zhǔn)的理想樣品。
Superclean graphene film was obtained by eliminating the contamination formed during the process of high temperature chemical vapor deposition (CVD) growth of graphene. Compared with the graphene grown by common methods, superclean graphene exhibits higher transmittance, higher carrier mobility, lower contact resistance, faster interface charge transfer performance and better hydrophilicity properties, thereby providing a perfect material platform for studying the intrinsic properties of graphene, exploring high-end optoelectronic applications developing testing standards, etc.
A3尺寸石墨烯薄膜
Large Area Monolayer Graphene on Cu Foil
A3尺寸石墨烯薄膜是BGl通用石墨烯薄膜的明星產(chǎn)品。其最大尺寸為29.7×42 （cm2）、石墨烯疇區(qū)達(dá)500μm，石墨烯質(zhì)量高、無缺陷、單晶化程度高。產(chǎn)能可達(dá)3萬片/年，產(chǎn)品性能穩(wěn)定，可持續(xù)供貨。其具有柔性、高透過率、高導(dǎo)電性等特點(diǎn)，可廣泛應(yīng)用于柔性顯示、電子器件、傳感器、超級(jí)銅、光電、生物醫(yī)學(xué)等應(yīng)用領(lǐng)域。
Large-area graphene is one of BGI's flagship products. This defect-free, high-quality graphene, has high degree of monocrystalization. The maximum product size is 297 mm × 420 mm, and the grain size is as high as 500 μm. The production capacity can reach to 30,000 pieces per year, with stable product performance and sustainable supply. Depending on its high transmittance and high conductivity, it can be widely used in applications such as flexible displays, electronic devices, sensors, super copper, and biomedical engineering
石墨烯薄膜系列
| 類 別 | 牌號(hào) | 特 征 | 尺寸 |
| 單晶石墨烯薄膜 | Cu-S | 1.單晶銅箔外延生長(zhǎng)單晶石墨烯 Single-crystal monolayer graphene grown on single crystal Cu foil | 2×2 |
2.銅箔厚度∶20-50μm Thickness of Cu foil: 20-50 μm | |||
3.晶面∶Cu（111） Crystal orientation: Cu(111) | 5×5 | ||
4.石墨烯覆蓋度∶>99% Coverage: > 99% | |||
5.石墨烯單層率∶>95% Monolayer rate: > 95% | 10×10 | ||
6.面電阻∶300-400 Ω/sq（SiO2/Si襯底） Sheet resistance on SiO2/Si substrate: 300-400 Ω/sq | |||
| 多晶石墨烯薄膜 | Cu-P1-C4 | 1.潔凈度∶>70% Cleanness: >70% | 2×2 |
2.銅箔厚度∶25μm Thickness of Cu foil: 25 μm | |||
3.石墨烯覆蓋度∶> 99% Coverage: > 99% | 5×5 | ||
4.石墨烯單層率∶>90% Monolayer rate: > 90% | |||
5.面電阻∶300-400 Ω/sq（SiO2/Si襯底） Sheet resistance on SiO2/Si substrate: 300-400 Ω/sq | 10×10 | ||
| Cu-P25 | 1.最大銅單晶疇區(qū)尺寸Cuds∶Cuds>25cm2 Highest Cu grain sizes Cuds: Cuds > 25 cm2 | 29.7×42 | |
2.銅箔厚度∶20-50μm Thickness of Cu foil: 20-50 μm | |||
3.石墨烯覆蓋度∶>99% Coverage: > 99% | |||
4.石墨烯單層率∶>90% Monolayer rate: > 90% | |||
5.石墨烯最大疇區(qū)尺寸∶500 μm Maximum grain size: 500 μm | |||
6.面電阻∶300-500Ω/sq（SiO2/Si襯底） Sheet resistance on SiO2/Si substrate: 300-500 Ω/sq | |||
| Cu-P9 | 1.最大銅單晶疇區(qū)尺寸Cuds∶9cm2<Cuds<25cm2 Highest Cu grain sizes Cuds：9 cm2 < Cuds< 25 cm2 | 29.7×42 | |
2.銅箔厚度∶20-50 μm Thickness of Cu foil: 20-50 μm | |||
3.石墨烯覆蓋度∶>99% Coverage: > 99% | |||
4.石墨烯單層率∶>90% Monolayer rate: > 90% | |||
5.石墨烯最大疇區(qū)尺寸∶500μm Maximum grain size: 500 μm | |||
6.面電阻∶300-500 Ω/sq（SiO2/Si襯底） Sheet resistance on SiO2/Si substrate: 300-500 Ω/sq | |||
| Cu-P1 | 1.銅單晶疇區(qū)尺寸Cu∶Cuds<9cm2 Cu grain sizes Cuds：Cuds < 9 cm2 | 2×2 | |
2.銅范厚度∶20-50μm Thickness of Cu foil: 20-50 μm | 5×5 | ||
3.石墨烯覆蓋度∶>99% Coverage: > 99% | 10×10 | ||
4.石墨烯單層率∶>90% Monolayer rate: > 90% | 21×29.7 | ||
5.石墨烯最大疇區(qū)尺寸∶500μm Maximum grain size: 500 μm | 29.7×42 | ||
6.面電阻∶300-500Ω/sq（SiO2/S襯底） Sheet resistance on SiO2/Si substrate: 300-500 Ω/sq | |||
| Cu-P0 | 1.銅箔厚度∶25μm Thickness of Cu foil: 25 μm | 19.5cm（寬幅） | |
2.石墨烯覆蓋度∶>99% Coverage: > 99% | |||
3.石墨烯單層率∶～90% Monolayer rate: ~ 90% | |||
4.石墨烯最大疇區(qū)尺寸∶30μm Maximum grain size: 30 μm | |||
5.面電阻∶400-600 Ω/sq（SiO2/Si襯底） Sheet resistance on SiO2/Si substrate: 400-600 Ω/sq |
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